Today, @GLOBALFOUNDRIES announced that it filed lawsuits against TSMC for infringing 16 GF patents: Here is the list of patents.
ml.globenewswire.com/Resource/Downl…
Patent: Bit cell with double patterned metal layer structures - GLOBALFOUNDRIES
More details: freepatentsonline.com/20140077380.pdf
Patent: Semiconductor device with transistor local interconnects (V. 2013) - GLOBALFOUNDRIES
More details: freepatentsonline.com/8581348.pdf
Patent: Semiconductor device with transistor local interconnects (V. 2016) - GLOBALFOUNDRIES
More details: freepatentsonline.com/9355910.pdf
Patent: Introduction of metal impurity to change workfunction of conductive electrodes (V.2008) - GLOBALFOUNDRIES
More details: freepatentsonline.com/7425497.pdf
Patent: Semiconductor device having contact layer providing electrical connections - GLOBALFOUNDRIES
More details: freepatentsonline.com/8598633.pdf
Patent: Method of forming a metal or metal nitride interface layer between silicon nitride and copper - GLOBALFOUNDRIES
More details: freepatentsonline.com/6518167.pdf
Patent: Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects - GLOBALFOUNDRIES
More details: freepatentsonline.com/8039966.pdf
Patent: Introduction of metal impurity to change workfunction of conductive electrodes (V. 2010) - GLOBALFOUNDRIES
More details: freepatentsonline.com/7750418.pdf
Patent: Methods of forming finfet devices with a shared gate structure - GLOBALFOUNDRIES
More details: freepatentsonline.com/8936986.pdf
Patent: Semiconductor device with stressed fin sections - GLOBALFOUNDRIES
More details: freepatentsonline.com/8912603.pdf
Patent: Multiple dielectric FinFET structure and method - GLOBALFOUNDRIES
More details: freepatentsonline.com/7378357.pdf
Patent: Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor - GLOBALFOUNDRIES
More details: freepatentsonline.com/9082877.pdf
Patent: Hybrid contact structure with low aspect ratio contacts in a semiconductor device - GLOBALFOUNDRIES
More details: freepatentsonline.com/8492269.pdf
Patent: Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas - GLOBALFOUNDRIES
More details: freepatentsonline.com/8835209.pdf
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