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Underfox Profile picture
@Underfox3
Aug 26, 2019 • 15 tweets • 12 min read • Read on X
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Today, @GLOBALFOUNDRIES announced that it filed lawsuits against TSMC for infringing 16 GF patents: Here is the list of patents.

ml.globenewswire.com/Resource/Downl…
Patent: Bit cell with double patterned metal layer structures - GLOBALFOUNDRIES

More details: freepatentsonline.com/20140077380.pdf
Patent: Semiconductor device with transistor local interconnects (V. 2013) - GLOBALFOUNDRIES

More details: freepatentsonline.com/8581348.pdf
Patent: Semiconductor device with transistor local interconnects (V. 2016) - GLOBALFOUNDRIES

More details: freepatentsonline.com/9355910.pdf
Patent: Introduction of metal impurity to change workfunction of conductive electrodes (V.2008) - GLOBALFOUNDRIES

More details: freepatentsonline.com/7425497.pdf
Patent: Semiconductor device having contact layer providing electrical connections - GLOBALFOUNDRIES

More details: freepatentsonline.com/8598633.pdf
Patent: Method of forming a metal or metal nitride interface layer between silicon nitride and copper - GLOBALFOUNDRIES

More details: freepatentsonline.com/6518167.pdf
Patent: Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects - GLOBALFOUNDRIES

More details: freepatentsonline.com/8039966.pdf
Patent: Introduction of metal impurity to change workfunction of conductive electrodes (V. 2010) - GLOBALFOUNDRIES

More details: freepatentsonline.com/7750418.pdf
Patent: Methods of forming finfet devices with a shared gate structure - GLOBALFOUNDRIES

More details: freepatentsonline.com/8936986.pdf
Patent: Semiconductor device with stressed fin sections - GLOBALFOUNDRIES

More details: freepatentsonline.com/8912603.pdf
Patent: Multiple dielectric FinFET structure and method - GLOBALFOUNDRIES

More details: freepatentsonline.com/7378357.pdf
Patent: Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor - GLOBALFOUNDRIES

More details: freepatentsonline.com/9082877.pdf
Patent: Hybrid contact structure with low aspect ratio contacts in a semiconductor device - GLOBALFOUNDRIES

More details: freepatentsonline.com/8492269.pdf
Patent: Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas - GLOBALFOUNDRIES

More details: freepatentsonline.com/8835209.pdf

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More from @Underfox3

Underfox Profile picture
Apr 11, 2022
Contrary to what is stated in this article, the cited patent does not refer to AMD CPUs, but to the accelerator present in RDNA3.

wccftech.com/amd-cpu-patent…
In patent writing it is good practice to avoid unnecessarily extending the explanation of likely application of the invention and to focus on explaining the innovation that is desired to be patented. In the case of the cited patent, this fact occurs.
The patent does not clarify a priori where the innovation will be applied, suggesting that the processor in question can be a CPU, a GPU, or even a combination of both, focusing exclusively on the details of the invention.
Read 12 tweets
Underfox Profile picture
Apr 6, 2022
About Intel Ocean Cove: Since the beginning of 2018, I had been following the work of the Hillsboro team, looking forward to have access to the first patent of the disruptive new architecture that was being developed... And in 2019, this patent was finally published.
Upon analyzing it, I was absolutely shocked by what I saw and was certain that this patent would never be granted in the state in which it was presented. However, yesterday I received notification that this patent had been granted.
I could make a long article to show the details about this architecture, but it is preferable to show throughout this thread why this patent was kept in my Pandora's box for so long.
Read 15 tweets
Underfox Profile picture
Sep 4, 2021
Things I was doing while I was recovering from ear infection: Studying the proposed 3D SRAM structure which Intel will use in its future processors together with its 20A node...
This is the 3D nanoribbon-based 6T SRAM cell proposal
This is the 3D nanoribbon-based 8T SRAM cell proposal
Read 4 tweets
Underfox Profile picture
Sep 2, 2021
In this paper, researchers have presented AfterImage, a new side-channel that exploits the Intel Instruction Pointer-based stride prefetcher.

arxiv.org/pdf/2109.00474… ImageImageImageImage
By reverse-engineering the ip-stride prefetcher in modern intel processors, the researchers have successfully developed three variants of AfterImage to leak control flow information across code regions, processes and the user-kernel boundary. ImageImageImage
This new side-channel attack does not rely on changes to the control flow graph and does not rely on branch-speculative execution, defeating many recent defences against transient side-channels.
Read 6 tweets
Underfox Profile picture
Aug 6, 2021
Here's the AMD patent list that I had promised you, bringing several new developments including GPU, CPU, memory and more.

Pt. 3
Follow the thread! 🦊
Patent: Dedicated Vector Sub-processor System - AMD

A new architectural proposal for CDNA2 and beyond, improving processing efficiency to HPC and Deep Learning applications...

More details: freepatentsonline.com/20210157588.pdf
Patent: Techniques for performing store-to-load forwarding - AMD

More details: freepatentsonline.com/20210157590.pdf
Read 21 tweets
Underfox Profile picture
Jul 31, 2021
In this paper, Intel researchers is presented C-for-Metal, an explicit SIMD programming framework designed to deliver close-to-the-metal performance on Intel GPUs.

arxiv.org/pdf/2101.11049… Image
The experimental results show that CM applications from different domains outperform the best-known SIMT-based OpenCL implementations, achieving up to 2.7x speedup on the latest Intel GPU. Image
GitHub:

github.com/intel/cm-compi…
Read 4 tweets

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